3D transistor technology patent crash? South Korea claims to apply earlier than Intel

According to South Korea’s e-news report, Intel recently announced that it is leading the world’s development of 3D transistor process technology, and the Korean research team has already developed it. South Korea filed a technology patent application with the United States about 10 days earlier than Intel. If it is audited as the same technology, South Korea will receive a huge amount of royalties.

Seoul University's Department of Electrical Engineering Professor Lee Yeho (translation) said that in South Korea and the United States have the same technology with the Intel published 3D transistor process technology tri-gateMOSFET bulkFinFET related technology. He said that the two technologies have only different names, but the application is the same.

Li Xiaohao said that from the information published so far by Intel, it is exactly the same as the patent technology held by South Korea. Related technology Korea has obtained patent rights in Korea and the United States, and published more than 60 papers, which have been verified in terms of technology. fact.

The bulkFinFET technology was patented in Korea on January 30, 2002, and was successfully registered in August 2003. The patent was then filed in the United States on February 4, 2003, and completed on April 26, 2005, two years later. Intel did not propose a tri-gate MOSFET patent application until Feb. 14, 2003, which was 10 days later.

The 3D pad crystal processing technology released by Intel can increase the number of transistor channels, increase the amount of current, and significantly reduce the current loss compared with the current 2D transistors, greatly improving its efficiency. In addition, this 3D transistor technology is also suitable for use in microfabrication processes to increase chip integration.

Intel plans to use this count in 22nm production process to enter the mobile device chip market. The demand for mobile chips continues to increase. If Li Shuhao’s patented technology is identified as the same technology after the review, a large amount of patent money will be available.

U.S. patents and inventors of bulkFinFET technology are registered as Li Haohao, and patent rights are held by patent marketing specialist PNIB. In addition, most of the technology-related application technologies are jointly owned by Li Haohao and its affiliated Seoul University. Li Haohao proposed related technology patent applications at that time and had invited Korean companies to jointly develop. However, at that time, it was rejected because the technology was not commercial.

Li Yuhao said that the first to apply for a patent can be protected by the patent law, and after confirmation, it is indeed earlier than Intel's patent application, there should be no other problems. In order to obtain U.S. patent protection, Intel will be the target and enter into relevant legal procedures with PNIB.

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